Invention Grant
US07824955B2 Hybrid beam deposition system and methods for fabricating metal oxide-ZnO films, p-type ZnO films, and ZnO-based II-VI compound semiconductor devices
失效
混合光束沉积系统以及用于制造金属氧化物ZnO膜，p型ZnO膜和基于ZnO的II-VI化合物半导体器件的方法
- Patent Title: Hybrid beam deposition system and methods for fabricating metal oxide-ZnO films, p-type ZnO films, and ZnO-based II-VI compound semiconductor devices
- Patent Title (中): 混合光束沉积系统以及用于制造金属氧化物ZnO膜，p型ZnO膜和基于ZnO的II-VI化合物半导体器件的方法
-
Application No.: US10525611Application Date: 2003-08-27
-
Publication No.: US07824955B2Publication Date: 2010-11-02
- Inventor: Henry W. White , Yungryel Ryu , Tae-seok Lee
- Applicant: Henry W. White , Yungryel Ryu , Tae-seok Lee
- Applicant Address: US MO Columbia
- Assignee: Moxtronics, Inc.
- Current Assignee: Moxtronics, Inc.
- Current Assignee Address: US MO Columbia
- Agency: Jacobs & Kim LLP
- Agent David Jacobs
- International Application: PCT/US03/27143 WO 20030827
- International Announcement: WO2004/020686 WO 20040311
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/16
Abstract:
A hybrid beam deposition (HBD) system and methods according to the present invention utilizes a unique combination of pulsed laser deposition (PLD) technique and equipment with equipment and techniques that provide a radical oxygen rf-plasma stream to effectively increase the flux density of available reactive oxygen at a deposition substrate for the effective synthesis of metal oxide thin films. The HBD system and methods of the present invention further integrate molecular beam epitaxy (MBE) and/or chemical vapor deposition (CVD) techniques and equipment in combination with the PLD equipment and technique and the radical oxygen rf-plasma stream to provide elemental source materials for the synthesis of undoped and/or doped metal oxide thin films as well as the synthesis of undoped and/or doped metal-based oxide alloy thin films.
Public/Granted literature
Information query
IPC分类:
