Invention Grant
- Patent Title: Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
- Patent Title (中): 采用选择性生长的可逆电阻切换元件的存储单元及其形成方法
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Application No.: US11772082Application Date: 2007-06-29
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Publication No.: US07824956B2Publication Date: 2010-11-02
- Inventor: April Schricker , Brad Herner , Mark Clark
- Applicant: April Schricker , Brad Herner , Mark Clark
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Dugan & Dugan, PC
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a reversible resistance-switching element above the first conductor using a selective growth process; (3) forming a diode above the first conductor; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.
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