Invention Grant
- Patent Title: Method for producing semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US12475104Application Date: 2009-05-29
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Publication No.: US07824957B2Publication Date: 2010-11-02
- Inventor: Kenichi Umeda , Atsushi Tanaka , Kohei Higashi , Maki Nangu
- Applicant: Kenichi Umeda , Atsushi Tanaka , Kohei Higashi , Maki Nangu
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2008-143253 20080530
- Main IPC: H01L21/423
- IPC: H01L21/423
Abstract:
During a process of forming an active layer of a semiconductor device using a ZnO film, the ZnO film is laser-annealed with an ultraviolet pulsed laser to reduce the resistance of the film, and then oxidation treatment is applied to increase the specific resistance value at a channel portion of the ZnO film, which once has excessively low resistance after the laser annealing, to 103Ω·cm or more.
Public/Granted literature
- US20090298226A1 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE Public/Granted day:2009-12-03
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