Invention Grant
US07824981B2 Method and apparatus for semiconductor device and semiconductor memory device
有权
半导体器件和半导体存储器件的方法和装置
- Patent Title: Method and apparatus for semiconductor device and semiconductor memory device
- Patent Title (中): 半导体器件和半导体存储器件的方法和装置
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Application No.: US11980154Application Date: 2007-10-30
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Publication No.: US07824981B2Publication Date: 2010-11-02
- Inventor: Chih-Hsin Wang
- Applicant: Chih-Hsin Wang
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/331 ; G11C16/04
Abstract:
A method comprises providing a first conductive region, arranging a second conductive region adjacent to and insulated from the first conductive region by a dielectric region, arranging a third region adjacent to and insulated from the second conductive region, and adjusting mechanical stress to at least one of the first conductive region and the second conductive region.
Public/Granted literature
- US20080070390A1 Method and apparatus for semiconductor device and semiconductor memory device Public/Granted day:2008-03-20
Information query
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