Invention Grant
- Patent Title: Method for integration of magnetic random access memories with improved lithographic alignment to magnetic tunnel junctions
- Patent Title (中): 磁性随机存取存储器与磁性隧道结的改进的光刻对准的集成方法
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Application No.: US11850427Application Date: 2007-09-05
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Publication No.: US07825000B2Publication Date: 2010-11-02
- Inventor: Sivananda K. Kanakasabapathy , Solomon Assefa
- Applicant: Sivananda K. Kanakasabapathy , Solomon Assefa
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Graham S. Jones, II; Louis J. Percello; Robert M. Trepp
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/00
Abstract:
A magnetic memory device including a Magnetic Tunnel Junction (MTJ) device comprises a substrate and Front End of Line (FEOL) circuitry. A Via level (VA) InterLayer Dielectric (ILD) layer, a bottom conductor layer, and an MTJ device formed over the top surface of the VA ILD layer are formed over a portion of the substrate. An alignment region including alignment marks extends through the bottom conductor layer and extends down into the device below the top surface of the VA ILD layers is juxtaposed with the MJT device.
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