Invention Grant
US07825002B2 Method of peeling thin film device and method of manufacturing semiconductor device using peeled thin film device
有权
剥离薄膜器件的方法和使用剥离的薄膜器件制造半导体器件的方法
- Patent Title: Method of peeling thin film device and method of manufacturing semiconductor device using peeled thin film device
- Patent Title (中): 剥离薄膜器件的方法和使用剥离的薄膜器件制造半导体器件的方法
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Application No.: US12016274Application Date: 2008-01-18
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Publication No.: US07825002B2Publication Date: 2010-11-02
- Inventor: Toru Takayama , Junya Maruyama , Shunpei Yamazaki
- Applicant: Toru Takayama , Junya Maruyama , Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2001-251870 20010822
- Main IPC: H01L21/762
- IPC: H01L21/762

Abstract:
There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.
Public/Granted literature
- US20090042356A1 Peeling Method and Method of Manufacturing Semiconductor Device Public/Granted day:2009-02-12
Information query
IPC分类: