Invention Grant
- Patent Title: Method of producing semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US11882991Application Date: 2007-08-08
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Publication No.: US07825004B2Publication Date: 2010-11-02
- Inventor: Toshiyuki Hirota
- Applicant: Toshiyuki Hirota
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2006-226250 20060823
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A method of producing a semiconductor device according to the present invention comprises steps of: (A) forming trenches (13) on the front surface (FS) of a semiconductor substrate (11) on the back surface (BS) of which a nitride film (12b) is formed; (B) depositing an insulating film (15) to bury the trenches (13); (C) removing the nitride film (12b) on the back surface (BS) of the semiconductor substrate (11) after the step (B); and (D) annealing before the insulating film (15) is etched after the step (C).
Public/Granted literature
- US20080050886A1 Method of producing semiconductor device Public/Granted day:2008-02-28
Information query
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