Invention Grant
US07825007B2 Method of joining a plurality of SOI substrates on a glass substrate by a heat treatment
有权
通过热处理在玻璃基板上接合多个SOI基板的方法
- Patent Title: Method of joining a plurality of SOI substrates on a glass substrate by a heat treatment
- Patent Title (中): 通过热处理在玻璃基板上接合多个SOI基板的方法
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Application No.: US12078410Application Date: 2008-03-31
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Publication No.: US07825007B2Publication Date: 2010-11-02
- Inventor: Shunpei Yamazaki , Yasuyuki Arai
- Applicant: Shunpei Yamazaki , Yasuyuki Arai
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2007-127148 20070511
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/301 ; H01L21/304 ; H01L21/46
Abstract:
After the plurality of single-crystal semiconductor layers are provided adjacent to each other with a certain distance over a glass substrate which is a support substrate, heat treatment is performed on the glass substrate. The support substrate shrinks by this heat treatment, and the adjacent single-crystal semiconductor layers are in contact with each other due to the shrink. Energy beam irradiation is performed with the plurality of single-crystal semiconductor layers being in contact with each other, the plurality of single-crystal semiconductor layers are integrated, and thus a continuous single-crystal semiconductor layer is formed.
Public/Granted literature
- US20080280424A1 Manufacturing method of SOI substrate and manufacturing method of semiconductor device Public/Granted day:2008-11-13
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