Invention Grant
- Patent Title: Integrated circuit comprising an amorphous region and method of manufacturing an integrated circuit
- Patent Title (中): 包括非晶区域的集成电路和制造集成电路的方法
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Application No.: US12122892Application Date: 2008-05-19
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Publication No.: US07825013B2Publication Date: 2010-11-02
- Inventor: Matthias Goldbach , Dietmar Henke , Sven Schmidbauer
- Applicant: Matthias Goldbach , Dietmar Henke , Sven Schmidbauer
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Agency: Fay Kaplun & Marcin, LLP
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L29/04 ; H01L31/20
Abstract:
An integrated circuit comprises a doped semiconductor portion including an amorphous portion and a contact structure comprising a conductive material. The contact structure is in contact with the amorphous portion. According to another embodiment, an integrated circuit comprises a doped semiconductor portion including a region having a non-stoichiometric composition and a contact structure comprising a conductive material. The contact structure is in contact with the region having a non-stoichiometric composition.
Public/Granted literature
- US20080283832A1 Integrated Circuit Comprising an Amorphous Region and Method of Manufacturing an Integrated Circuit Public/Granted day:2008-11-20
Information query
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