Invention Grant
- Patent Title: Method for implanting ions in semiconductor device
- Patent Title (中): 在半导体器件中注入离子的方法
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Application No.: US11026294Application Date: 2004-12-30
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Publication No.: US07825015B2Publication Date: 2010-11-02
- Inventor: Yong-Sun Sohn , Seung-Woo Jin , Min-Yong Lee , Kyoung-Bong Rouh
- Applicant: Yong-Sun Sohn , Seung-Woo Jin , Min-Yong Lee , Kyoung-Bong Rouh
- Applicant Address: KR Ichon-si, Kyoungki-do
- Assignee: Hynix Semiconductor, Inc.
- Current Assignee: Hynix Semiconductor, Inc.
- Current Assignee Address: KR Ichon-si, Kyoungki-do
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2004-0032799 20040510; KR10-2004-0077964 20040930
- Main IPC: H01L21/425
- IPC: H01L21/425
Abstract:
The present invention provides a method for implanting ions in a semiconductor device capable of compensating for a difference in threshold voltages between a central portion and edge portions of a substrate generated while performing uniform ion implantation to entire surfaces of a substrate and another method for fabricating a semiconductor device capable of improving distribution of transistor parameters inside a substrate by forming a nonuniform channel doping layer or by forming a nonuniform junction profile.
Public/Granted literature
- US20050250299A1 Method for implanting ions in semiconductor device Public/Granted day:2005-11-10
Information query
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