Method of producing a semiconductor element

Invention Grant

US07825016B2 Method of producing a semiconductor element 有权

Title translation: 半导体元件的制造方法

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Patent Title: Method of producing a semiconductor element
Patent Title (中): 半导体元件的制造方法
Application No.: US11559557

Application Date: 2006-11-14
Publication No.: US07825016B2

Publication Date: 2010-11-02
Inventor: Luis-Felipe Giles
Applicant: Luis-Felipe Giles
Applicant Address: DE
Assignee: Infineon Technologies AG
Current Assignee: Infineon Technologies AG
Current Assignee Address: DE
Agency: Dickstein, Shapiro LLP
Priority: DE102005054218 20051114
Main IPC: H01L21/425
IPC: H01L21/425

Method of producing a semiconductor element

Abstract:

In a method for fabricating a semiconductor element in a substrate, micro-cavities are formed in the substrate. Furthermore, doping atoms are implanted into the substrate, whereby crystal defects are produced in the substrate. The substrate is heated, so that at least some of the crystal defects are eliminated using the micro-cavities, and the semiconductor element is formed using the doping atoms.

Abstract(Chinese):

在衬底中制造半导体元件的方法中，在衬底中形成微腔。此外，将掺杂原子注入到衬底中，从而在衬底中产生晶体缺陷。加热衬底，使得使用微腔消除至少一些晶体缺陷，并且使用掺杂原子形成半导体元件。

Public/Granted literature

US20070161219A1 METHOD OF PRODUCING A SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT Public/Granted day:2007-07-12

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/42	....用辐射轰击的
H01L21/423	.....带有高能辐射的
H01L21/425	......产生离子注入的