Invention Grant
- Patent Title: Method for manufacturing display device
- Patent Title (中): 显示装置制造方法
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Application No.: US11028478Application Date: 2005-01-04
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Publication No.: US07825021B2Publication Date: 2010-11-02
- Inventor: Shunpei Yamazaki , Toru Takayama , Kengo Akimoto , Hajime Tokunaga
- Applicant: Shunpei Yamazaki , Toru Takayama , Kengo Akimoto , Hajime Tokunaga
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2004-009778 20040116
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/3205

Abstract:
It is an object of the present invention to provide a method for manufacturing a highly reliable display device with a preferable yield. A method for manufacturing a display device according to the invention comprises the steps of: forming a first electrode including a conductive material added with a material which prevents crystallization; forming a layer containing an organic compound over the first electrode by heating the first electrode under a reduced pressure at temperatures of 350° C. or higher; and forming a second electrode over the layer containing an organic compound. It is preferable to perform the heat treatment at temperatures of 350° C. or higher, preferably, 375° C. or higher for 12 hours or longer. When the first electrode is formed by using indium tin oxide containing silicon oxide, a highly display device can be manufactured.
Public/Granted literature
- US20050197030A1 Method for manufacturing display device Public/Granted day:2005-09-08
Information query
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