Method for the production of structured layers on substrates

Invention Grant

US07825029B2 Method for the production of structured layers on substrates 有权

Title translation: 在基板上生产结构化层的方法

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Patent Title: Method for the production of structured layers on substrates
Patent Title (中): 在基板上生产结构化层的方法
Application No.: US10511334

Application Date: 2003-04-15
Publication No.: US07825029B2

Publication Date: 2010-11-02
Inventor: Jurgen Leib , Florian Bieck , Dietrich Mund
Applicant: Jurgen Leib , Florian Bieck , Dietrich Mund
Applicant Address: DE Mainz
Assignee: Schott AG
Current Assignee: Schott AG
Current Assignee Address: DE Mainz
Agency: Ohlandt, Greeley, Ruggiero & Perle, L.L.P.
Priority: DE20205830U 20020415; DE10222609 20020523; DE10222958 20020523; DE10222964 20020523; DE10252787 20021113; DE10301559 20030116
International Application: PCT/EP03/03884 WO 20030415
International Announcement: WO03/088340 WO 20031023
Main IPC: H01L21/316
IPC: H01L21/316

Method for the production of structured layers on substrates

Abstract:

A method for the patterned coating of a substrate with at least one surface is provided. The method is suitable for the rapid and inexpensive production of precise patterns. The method includes the steps of: producing at least one negatively patterned first coating on the at least one surface, depositing at least one second layer, which includes a material with a vitreous structure, on the surface, and at least partially removing the first coating.

Abstract(Chinese):

提供了具有至少一个表面的基底的图案化涂覆的方法。该方法适用于精确模式的快速和廉价生产。该方法包括以下步骤：在至少一个表面上产生至少一个负图案化的第一涂层，在表面上沉积至少一个第二层，其包括具有玻璃质结构的材料，并且至少部分地去除第一涂层。

Public/Granted literature

US20050233503A1 Method for the production of structured layers on substrates Public/Granted day:2005-10-20

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/314	......无机层（H01L21/3105，H01L21/32优先）
H01L21/316	.......由氧化物或玻璃状氧化物或以氧化物为基础的玻璃组成的无机层