Invention Grant
- Patent Title: Methods of forming variable resistance memory cells, and methods of etching germanium, antimony, and tellurium-comprising materials
- Patent Title (中): 形成可变电阻记忆单元的方法，以及蚀刻锗，锑和含碲材料的方法
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Application No.: US11450020Application Date: 2006-06-09
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Publication No.: US07825033B2Publication Date: 2010-11-02
- Inventor: Tuman Earl Allen
- Applicant: Tuman Earl Allen
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method of etching a material that includes comprising germanium, antimony, and tellurium encompasses exposing said material to a plasma-enhanced etching chemistry comprising Cl2 and CH2F2. A method of forming a variable resistance memory cell includes forming a conductive inner electrode material over a substrate. A variable resistance chalcogenide material comprising germanium, antimony, and tellurium is formed over the conductive inner electrode material. A conductive outer electrode material is formed over the chalcogenide material. The germanium, antimony, and tellurium-comprising material is plasma etched using a chemistry comprising Cl2 and CH2F2.
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