Invention Grant
- Patent Title: Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
- Patent Title (中): 使用含硅前体和原子氧化学气相沉积高质量流动状二氧化硅
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Application No.: US11754440Application Date: 2007-05-29
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Publication No.: US07825038B2Publication Date: 2010-11-02
- Inventor: Nitin K. Ingle , Zheng Yuan , Paul Gee , Kedar Sapre
- Applicant: Nitin K. Ingle , Zheng Yuan , Paul Gee , Kedar Sapre
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Townsend and Townsend and Crew
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.
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