Invention Grant
US07825041B2 Method of reworking a semiconductor substrate and method of forming a pattern of a semiconductor device
有权
半导体衬底的再加工方法以及形成半导体器件的图案的方法
- Patent Title: Method of reworking a semiconductor substrate and method of forming a pattern of a semiconductor device
- Patent Title (中): 半导体衬底的再加工方法以及形成半导体器件的图案的方法
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Application No.: US12068410Application Date: 2008-02-06
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Publication No.: US07825041B2Publication Date: 2010-11-02
- Inventor: Eun-Sung Kim , Tae-Kyu Kim , Seok-Hwan Oh
- Applicant: Eun-Sung Kim , Tae-Kyu Kim , Seok-Hwan Oh
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0013075 20070208
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A method of reworking a semiconductor substrate and a method of forming a pattern of semiconductor device using the same without damage to an organic anti-reflective coating (ARC) is provided. The method of reworking a semiconductor substrate includes forming a photoresist pattern on a substrate having the organic ARC formed thereon. An entire surface of the substrate having the photoresist pattern formed thereon may be exposed when a defect is present in the photoresist pattern. The entire-surface-exposed photoresist pattern may be removed by performing a developing process without damage to the organic ARC.
Public/Granted literature
- US20080194097A1 Method of reworking a semiconductor substrate and method of forming a pattern of a semiconductor device Public/Granted day:2008-08-14
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