Invention Grant
- Patent Title: Method for fabricating capacitor in semiconductor device
- Patent Title (中): 在半导体器件中制造电容器的方法
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Application No.: US11478175Application Date: 2006-06-28
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Publication No.: US07825043B2Publication Date: 2010-11-02
- Inventor: Kee-Jeung Lee
- Applicant: Kee-Jeung Lee
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2005-0114367 20051128
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A method for fabricating a capacitor in a semiconductor device includes: forming a bottom electrode; forming a ZrxAlyOz dielectric layer on the bottom electrode using an atomic layer deposition (ALD) method, wherein the ZrxAlyOz dielectric layer comprises a zirconium (Zr) component, an aluminum (Al) component and an oxygen (O) component mixed in predetermined mole fractions of x, y and z, respectively; and forming a top electrode on the ZrxAlyOz dielectric layer.
Public/Granted literature
- US20070122967A1 Method for fabricating capacitor in semiconductor device Public/Granted day:2007-05-31
Information query
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