Invention Grant
- Patent Title: Semiconductor porcelain composition
- Patent Title (中): 半导体瓷组成
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Application No.: US12063494Application Date: 2005-08-11
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Publication No.: US07825054B2Publication Date: 2010-11-02
- Inventor: Takeshi Shimada , Kei Matsumoto , Koichi Terao , Kazuya Toji , Kazuhiro Nishikawa
- Applicant: Takeshi Shimada , Kei Matsumoto , Koichi Terao , Kazuya Toji , Kazuhiro Nishikawa
- Applicant Address: JP Tokyo
- Assignee: Hitachi Metals, Ltd.
- Current Assignee: Hitachi Metals, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Stein McEwen, LLP
- International Application: PCT/JP2005/014769 WO 20050811
- International Announcement: WO2007/023512 WO 20070301
- Main IPC: C04B35/468
- IPC: C04B35/468

Abstract:
The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.
Public/Granted literature
- US20090233785A1 SEMICONDUCTOR PORCELAIN COMPOSITION Public/Granted day:2009-09-17
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