A thermal-type infrared image sensing device and method of producing a thermal-type infrared image sensing device are provided. The thermal-type infrared image sensing device includes pixel elements that are two-dimensionally arranged on a semiconductor substrate. Each pixel element includes a detector that detects temperature, an infrared-light absorber that absorbs incident infrared light and that converts the light into heat, and a support that supports the detector apart from the semiconductor substrate. The thermal-type infrared image sensing device also includes reference-pixel elements that are arranged adjacent to and along a row of the pixel elements. Each of the reference pixels generates a reference signal, and each of the reference pixels includes a structure that shields a detector from incident infrared light. The detectors of the pixel elements and the reference-pixel elements are each connected to the semiconductor substrate through the respective supports.