Invention Grant
US07825387B2 Method for quantitative determination of the suitability of crystals for optical components exposed to high energy densities, crystals graded in this way and uses thereof 有权
用于定量测定暴露于高能量密度的光学部件的晶体的适应性的方法,以这种方式分级的晶体及其用途

Method for quantitative determination of the suitability of crystals for optical components exposed to high energy densities, crystals graded in this way and uses thereof
Abstract:
A method is described for quantitative determination of suitability of an optical material, especially alkali halide and alkaline earth halide single crystals, for optical components exposed to high energy densities, especially of pulsed laser light at wavelengths under 250 nm. In this procedure radiation-dependent transmission of the optical material is determined at ultraviolet wavelengths by fluorescence measurements for fluorescence induced by ultraviolet radiation at these ultraviolet wavelengths. This is accomplished by a method including determining an induced fluorescence maximum of a non-linear absorption process, measuring a slope (|dT/dH|) of a functional relationship representing the dependence of the radiation-dependent transmission on fluence (H) for the induced fluorescence and determining radiation-dependent transmissions from this slope for particular fluence values.
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