Invention Grant
US07825405B2 Devices comprising coated semiconductor nanocrystals heterostructures
有权
包括涂覆的半导体纳米晶体异质结构的器件
- Patent Title: Devices comprising coated semiconductor nanocrystals heterostructures
- Patent Title (中): 包括涂覆的半导体纳米晶体异质结构的器件
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Application No.: US12213001Application Date: 2008-06-12
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Publication No.: US07825405B2Publication Date: 2010-11-02
- Inventor: Sungjee Kim , Moungi G. Bawendi
- Applicant: Sungjee Kim , Moungi G. Bawendi
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Steptoe & Johnson LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; B32B5/16
Abstract:
A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.
Public/Granted literature
- US20090301564A1 Semiconductor nanocrystals heterostructures Public/Granted day:2009-12-10
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