Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12659734Application Date: 2010-03-19
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Publication No.: US07825410B2Publication Date: 2010-11-02
- Inventor: Osamu Mizoguchi
- Applicant: Osamu Mizoguchi
- Applicant Address: JP Kawasaki, Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kawasaki, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-180610 20080710
- Main IPC: H01L23/12
- IPC: H01L23/12

Abstract:
A semiconductor device, includes a package substrate having a first surface and a second surface opposite to the first surface, and a semiconductor element installed in the first surface of the package substrate. The package substrate includes a plurality of first land pads disposed in the first surface, second land pads disposed in the second surface and a second testing-dedicated pad disposed in the second surface. The semiconductor element is electrically coupled to the first land pads, an inter-pad distance for the second land pads is larger than an inter-pad distance for the first land pads, the first land pad contains a first testing-dedicated pad electrically coupled to the semiconductor element, the first testing-dedicated pad and the second testing-dedicated pad each include a dedicated terminal, which is essential for applying a specified electrical signal from an LSI tester, when an LSI testing is conducted for a semiconductor wafer and the first testing-dedicated pad is electrically coupled to only the second testing-dedicated pad through a wiring.
Public/Granted literature
- US20100193787A1 Semiconductor device Public/Granted day:2010-08-05
Information query
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