Invention Grant
- Patent Title: Light emitting diode of high quantum efficiency and system thereof
- Patent Title (中): 高量子效率的发光二极管及其系统
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Application No.: US12202532Application Date: 2008-09-02
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Publication No.: US07825418B2Publication Date: 2010-11-02
- Inventor: Ga-Lane Chen
- Applicant: Ga-Lane Chen
- Applicant Address: TW Tu-Cheng, Taipei Hsien
- Assignee: Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: TW Tu-Cheng, Taipei Hsien
- Agent Andrew C. Cheng
- Priority: CN200710202660 20071126
- Main IPC: H01L27/15
- IPC: H01L27/15

Abstract:
A light emitting diode (LED) includes a transparent substrate, a first type cladding layer, an active layer, a second type cladding layer, and first and second electrodes. The first type cladding layer is disposed on the transparent substrate. The active layer and the second electrode are juxtaposed on the first type cladding layer. The second type cladding layer is disposed on the active layer. The second electrode is disposed on the second type cladding layer. The first and second type cladding layers are doped with nanoparticles.
Public/Granted literature
- US20090134406A1 LIGHT EMITTING DIODE OF HIGH QUANTUM EFFICIENCY AND SYSTEM THEREOF Public/Granted day:2009-05-28
Information query
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