Invention Grant
- Patent Title: Method for forming slot via bitline for MRAM devices
- Patent Title (中): 用于通过MRAM器件的位线形成槽的方法
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Application No.: US12539942Application Date: 2009-08-12
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Publication No.: US07825420B2Publication Date: 2010-11-02
- Inventor: Michael C. Gaidis , Carl Radens , Lawrence A. Clevenger , Timothy J. Dalton , Louis L. C. Hsu , Keith Kwong Hon Wong , Chih-Chao Yang
- Applicant: Michael C. Gaidis , Carl Radens , Lawrence A. Clevenger , Timothy J. Dalton , Louis L. C. Hsu , Keith Kwong Hon Wong , Chih-Chao Yang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Louis Percello
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline formed therein, the slot via bitline in contact with the hardmask and in contact with an etch stop layer partially surrounding sidewalls of the hardmask.
Public/Granted literature
- US20090302405A1 METHOD FOR FORMING SLOT VIA BITLINE FOR MRAM DEVICES Public/Granted day:2009-12-10
Information query
IPC分类:
