Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11700761Application Date: 2007-02-01
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Publication No.: US07825423B2Publication Date: 2010-11-02
- Inventor: Akinori Shiraishi , Yuichi Taguchi , Masahiro Sunohara , Hideaki Sakaguchi , Naoyuki Koizumi , Kei Murayama , Mitsutoshi Higashi
- Applicant: Akinori Shiraishi , Yuichi Taguchi , Masahiro Sunohara , Hideaki Sakaguchi , Naoyuki Koizumi , Kei Murayama , Mitsutoshi Higashi
- Applicant Address: JP Nagano-shi, Nagano
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano-shi, Nagano
- Agency: Drinker Biddle & Reath LLP
- Priority: JPP2006-025649 20060202
- Main IPC: H01L29/22
- IPC: H01L29/22 ; H01L29/24
Abstract:
In a semiconductor device 100, a light emitting device 102 is mounted on a substrate 101. A light reflection preventing film 130 for preventing a reflection of a light is formed on an upper surface of the light emitting device 102. Moreover, a plate-shaped cover 103 formed of a glass having a light transparency is disposed above the light emitting device 102, and a light reflection preventing film 140 for preventing a reflection of a light is also formed on an upper surface of the cover 103.
Public/Granted literature
- US20070194712A1 Semiconductor device and method of manufacturing semiconductor device Public/Granted day:2007-08-23
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