Invention Grant
- Patent Title: Semiconductor light-emitting device
- Patent Title (中): 半导体发光装置
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Application No.: US12079760Application Date: 2008-03-28
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Publication No.: US07825426B2Publication Date: 2010-11-02
- Inventor: Masahiko Kobayakawa
- Applicant: Masahiko Kobayakawa
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2007-092879 20070330
- Main IPC: H01L31/048
- IPC: H01L31/048

Abstract:
A semiconductor light-emitting device includes a lead frame, a semiconductor light-emitting element mounted on the top surface of the bonding region, and a case covering part of the lead frame. The bottom surface of the bonding region is exposed to the outside of the case. The lead frame includes a thin extension extending from the bonding region and having a top surface which is flush with the top surface of the bonding region. The thin extension has a bottom surface which is offset from the bottom surface of the bonding region toward the top surface of the bonding region.
Public/Granted literature
- US20080237627A1 Semiconductor light-emitting device Public/Granted day:2008-10-02
Information query
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