Invention Grant
- Patent Title: GaN-based semiconductor light emitting device
- Patent Title (中): GaN系半导体发光元件
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Application No.: US12251872Application Date: 2008-10-15
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Publication No.: US07825428B2Publication Date: 2010-11-02
- Inventor: Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
- Applicant: Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
- Applicant Address: KR Gyunggi-do
- Assignee: Samsung LED Co., Ltd.
- Current Assignee: Samsung LED Co., Ltd.
- Current Assignee Address: KR Gyunggi-do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2008-0012244 20080211
- Main IPC: H01L33/32
- IPC: H01L33/32
Abstract:
There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlxInyGa1−x−yN, where 0
Public/Granted literature
- US20090200565A1 GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2009-08-13
Information query
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