Invention Grant
US07825437B2 Unity beta ratio tri-gate transistor static random access memory (SRAM)
有权
统一beta比三栅晶体管静态随机存取存储器（SRAM）
- Patent Title: Unity beta ratio tri-gate transistor static random access memory (SRAM)
- Patent Title (中): 统一beta比三栅晶体管静态随机存取存储器（SRAM）
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Application No.: US12006082Application Date: 2007-12-28
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Publication No.: US07825437B2Publication Date: 2010-11-02
- Inventor: Ravi Pillarisetty , Suman Datta , Jack Kavalieros , Brian S. Doyle , Uday Shah
- Applicant: Ravi Pillarisetty , Suman Datta , Jack Kavalieros , Brian S. Doyle , Uday Shah
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Ryder, Lu, Mazzeo, and Konieczny, LLC
- Agent Douglas J. Ryder
- Main IPC: H01L27/118
- IPC: H01L27/118
Abstract:
In general, in one aspect, a method includes forming N-diffusion and P-diffusion fins in a semiconductor substrate. A P-diffusion gate layer is formed over the semiconductor substrate and removed from the N-diffusion fins. A pass-gate N-diffusion gate layer is formed over the semiconductor substrate and removed from the P-diffusion fins and pull-down N-diffusion fins. A pull-down N-diffusion layer is formed over the semiconductor substrate.
Public/Granted literature
- US20090166680A1 Unity beta ratio tri-gate transistor static radom access memory (SRAM) Public/Granted day:2009-07-02
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