Invention Grant
- Patent Title: Semiconductor constructions
- Patent Title (中): 半导体结构
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Application No.: US11214998Application Date: 2005-08-29
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Publication No.: US07825443B2Publication Date: 2010-11-02
- Inventor: Richard Holscher , Zhiping Yin , Tom Glass
- Applicant: Richard Holscher , Zhiping Yin , Tom Glass
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L31/062
- IPC: H01L31/062 ; C09K19/00
Abstract:
In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.
Public/Granted literature
- US20060220186A1 Semiconductor constructions Public/Granted day:2006-10-05
Information query
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