Invention Grant
- Patent Title: Image sensor pixel having a lateral doping profile formed with indium doping
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Application No.: US12690024Application Date: 2010-01-19
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Publication No.: US07825444B2Publication Date: 2010-11-02
- Inventor: Howard E. Rhodes , Hidetoshi Nozaki
- Applicant: Howard E. Rhodes , Hidetoshi Nozaki
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman, LLP
- Main IPC: H01L31/062
- IPC: H01L31/062
Abstract:
An active pixel using a transfer gate that has a polysilicon gate doped with indium. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The pixel substrate has a laterally doping gradient doped with an indium dopant.
Public/Granted literature
- US20100117123A1 IMAGE SENSOR PIXEL HAVING A LATERAL DOPING PROFILE FORMED WITH INDIUM DOPING Public/Granted day:2010-05-13
Information query
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