Invention Grant
US07825445B2 Magnetoresistive memory elements with separate read and write current paths
有权
具有独立读和写电流路径的磁阻存储元件
- Patent Title: Magnetoresistive memory elements with separate read and write current paths
- Patent Title (中): 具有独立读和写电流路径的磁阻存储元件
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Application No.: US11947194Application Date: 2007-11-29
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Publication No.: US07825445B2Publication Date: 2010-11-02
- Inventor: Mark William Covington
- Applicant: Mark William Covington
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Campbell Nelson Whipps LLC
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A magnetoresistive memory element has a free layer, and a write current path aligned with a free layer plane. The memory element has a pinned layer with a magnetization direction aligned with that of the free layer. A barrier layer is disposed between the free layer and the pinned layer. The free, barrier and pinned layers together form a layer stack that has a read current path that extends through the layer stack and that is not aligned with the write current path in the free layer.
Public/Granted literature
- US20090141541A1 MAGNETORESISTIVE MEMORY ELEMENTS WITH SEPARATE READ AND WRITE CURRENT PATHS Public/Granted day:2009-06-04
Information query
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