Invention Grant
- Patent Title: U-shaped SONOS memory having an elevated source and drain
- Patent Title (中): 具有升高的源极和漏极的U形SONOS存储器
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Application No.: US12192945Application Date: 2008-08-15
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Publication No.: US07825448B2Publication Date: 2010-11-02
- Inventor: Masatomi Okanishi , Yoshihiro Mikasa , Hiroshi Murai
- Applicant: Masatomi Okanishi , Yoshihiro Mikasa , Hiroshi Murai
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Priority: JP2007-213000 20070817
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
A semiconductor device and a method for manufacturing thereof are provided. The semiconductor device includes two epitaxial semiconductor layers formed on a semiconductor substrate, bit lines formed on upper portions of the two epitaxial semiconductor layers, and a charge storage layer formed on the semiconductor substrate between the two epitaxial semiconductor layers.
Public/Granted literature
- US20090200599A1 U-SHAPED SONOS MEMORY HAVING AN ELEVATED SOURCE AND DRAIN Public/Granted day:2009-08-13
Information query
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