A memory cell, array and device include an active area formed in a substrate with a vertical transistor including a first end disposed over a first portion of the active area. The vertical transistor is formed as an epitaxial post on the substrate surfaces extends from the surface of the substrate, and includes a gate formed around a perimeter of the epitaxial post. A capacitor is formed on the vertical transistor and a buried digit line vertically couples to a second portion of the active area. An electronic system and method for forming a memory cell are also disclosed.