Method of forming an EEPROM device and structure therefor

Invention Grant

US07825454B2 Method of forming an EEPROM device and structure therefor 有权

Title translation: 形成EEPROM器件的方法及其结构

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Patent Title: Method of forming an EEPROM device and structure therefor
Patent Title (中): 形成EEPROM器件的方法及其结构
Application No.: US12793403

Application Date: 2010-06-03
Publication No.: US07825454B2

Publication Date: 2010-11-02
Inventor: John J. Naughton , Matthew Tyler
Applicant: John J. Naughton , Matthew Tyler
Applicant Address: US AZ Phoenix
Assignee: Semiconductor Components Industries, LLC
Current Assignee: Semiconductor Components Industries, LLC
Current Assignee Address: US AZ Phoenix
Agent Robert F. Hightower
Main IPC: H01L29/76
IPC: H01L29/76 ; H01L29/788

Method of forming an EEPROM device and structure therefor

Abstract:

In one embodiment, an EEPROM device is formed to include a metal layer having an opening therethrough. The opening overlies a portion of a floating gate of the EEPROM device.

Abstract(Chinese):

在一个实施例中，EEPROM器件被形成为包括具有穿过其中的开口的金属层。开口覆盖EEPROM器件的浮动栅极的一部分。

Public/Granted literature

US20100244116A1 METHOD OF FORMING AN EEPROM DEVICE AND STRUCTURE THEREFOR Public/Granted day:2010-09-30

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件