Invention Grant
US07825455B2 Three terminal nonvolatile memory device with vertical gated diode
有权
具有垂直门控二极管的三端子非易失性存储器件
- Patent Title: Three terminal nonvolatile memory device with vertical gated diode
- Patent Title (中): 具有垂直门控二极管的三端子非易失性存储器件
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Application No.: US12320351Application Date: 2009-01-23
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Publication No.: US07825455B2Publication Date: 2010-11-02
- Inventor: Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Mark G. Johnson , Paul M. Farmwald , Igor G. Kouznetsov
- Applicant: Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Mark G. Johnson , Paul M. Farmwald , Igor G. Kouznetsov
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
Public/Granted literature
- US20090173985A1 Dense arrays and charge storage devices Public/Granted day:2009-07-09
Information query
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