Invention Grant
- Patent Title: Transistors
- Patent Title (中): 晶体管
-
Application No.: US12070078Application Date: 2008-02-15
-
Publication No.: US07825462B2Publication Date: 2010-11-02
- Inventor: Sanh D. Tang , Gordon Haller , Kris K. Brown , Tuman Earl Allen, III
- Applicant: Sanh D. Tang , Gordon Haller , Kris K. Brown , Tuman Earl Allen, III
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John PS
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
The invention includes a transistor device having a semiconductor substrate with an upper surface. A pair of source/drain regions are formed within the semiconductor substrate and a channel region is formed within the semiconductor substrate and extends generally perpendicularly relative to the upper surface of the semiconductor substrate. A gate is formed within the semiconductor substrate between the pair of the source/drain regions.
Public/Granted literature
- US20080142882A1 Transistors Public/Granted day:2008-06-19
Information query
IPC分类:
