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US07825464B2 Semiconductor device with recessed active region and gate in a groove 有权
半导体器件具有凹入的有源区和栅极在沟槽中

  • Patent Title: Semiconductor device with recessed active region and gate in a groove
  • Patent Title (中): 半导体器件具有凹入的有源区和栅极在沟槽中
  • Application No.: US12020651
    Application Date: 2008-01-28
  • Publication No.: US07825464B2
    Publication Date: 2010-11-02
  • Inventor: Gyu Seog Cho
  • Applicant: Gyu Seog Cho
  • Applicant Address: KR Kyoungki-do
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Kyoungki-do
  • Agency: Ladas & Parry LLP
  • Priority: KR10-2007-0134035 20071220
  • Main IPC: H01L29/78
  • IPC: H01L29/78
Semiconductor device with recessed active region and gate in a groove
Abstract:
A semiconductor device and a method for manufacturing the same are disclosed. The disclosed semiconductor device includes a semiconductor substrate having a device isolation structure for delimiting an active region, the active region being recessed and grooves being defined in channel forming areas of the active region; gates formed in and over the grooves; gate spacers formed on both sidewalls of the gates over portions of the recessed active region which are positioned on both sides of the gates; an LDD region formed in the active region under the gate spacers; junction areas formed in the active region on both sides of the gates including the gate spacers; and landing plugs formed on the junction areas.
Abstract(Chinese):

公开了一种半导体器件及其制造方法。 所公开的半导体器件包括具有用于限定有源区的器件隔离结构的半导体衬底，有源区是凹陷的，并且沟槽限定在有源区的沟道形成区中; 形成在槽内和上面的门; 栅极隔离物在位于栅极两侧的凹入有源区的部分上形成在栅极的两个侧壁上; 形成在栅极间隔下的有源区中的LDD区; 形成在包括栅极间隔物的栅极两侧的有源区域中的接合区域; 和在连接区域上形成的着陆塞。

Public/Granted literature
Information query
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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76 ...单极器件
H01L29/772 ....场效应晶体管
H01L29/78 .....由绝缘栅产生场效应的
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