Invention Grant
US07825467B2 Semiconductor component having a drift zone and a drift control zone
有权
具有漂移区和漂移控制区的半导体元件
- Patent Title: Semiconductor component having a drift zone and a drift control zone
- Patent Title (中): 具有漂移区和漂移控制区的半导体元件
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Application No.: US12241808Application Date: 2008-09-30
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Publication No.: US07825467B2Publication Date: 2010-11-02
- Inventor: Armin Willmeroth , Anton Mauder , Franz Hirler
- Applicant: Armin Willmeroth , Anton Mauder , Franz Hirler
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
Abstract:
A description is given of a normally on semiconductor component having a drift zone, a drift control zone and a drift control zone dielectric arranged between the drift zone and the drift control zone.
Public/Granted literature
- US20100078694A1 SEMICONDUCTOR COMPONENT HAVING A DRIFT ZONE AND A DRIFT CONTROL ZONE Public/Granted day:2010-04-01
Information query
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