Invention Grant
US07825469B2 Threshold voltage compensation for pixel design of CMOS image sensors
有权
CMOS图像传感器的像素设计阈值电压补偿
- Patent Title: Threshold voltage compensation for pixel design of CMOS image sensors
- Patent Title (中): CMOS图像传感器的像素设计阈值电压补偿
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Application No.: US11850488Application Date: 2007-09-05
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Publication No.: US07825469B2Publication Date: 2010-11-02
- Inventor: Wagdi W. Abadeer , John A. Fifield
- Applicant: Wagdi W. Abadeer , John A. Fifield
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent W. Riyon Harding
- Main IPC: H01L29/72
- IPC: H01L29/72

Abstract:
The present disclosure is directed to a CMOS active pixel sensor that compensates for variations in a threshold voltage of a source follower contained therein. A structure in accordance with an embodiment includes: a replica source follower transistor; a system for creating a current in said replica source follower transistor such that a gate-source voltage of said replica source follower is substantially equal to a threshold voltage of said replica source follower; and a current mirror for biasing the isolation source follower transistor at a same current density as the replica source follower transistor.
Public/Granted literature
- US20090057804A1 THRESHOLD VOLTAGE COMPENSATION FOR PIXEL DESIGN OF CMOS IMAGE SENSORS Public/Granted day:2009-03-05
Information query
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