Invention Grant
US07825492B2 Isolated vertical power device structure with both N-doped and P-doped trenches
有权
具有N掺杂和P掺杂沟槽的隔离垂直功率器件结构
- Patent Title: Isolated vertical power device structure with both N-doped and P-doped trenches
- Patent Title (中): 具有N掺杂和P掺杂沟槽的隔离垂直功率器件结构
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Application No.: US12259834Application Date: 2008-10-28
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Publication No.: US07825492B2Publication Date: 2010-11-02
- Inventor: Richard Austin Blanchard
- Applicant: Richard Austin Blanchard
- Applicant Address: US TX Carrollton
- Assignee: STMicroelectronics, Inc.
- Current Assignee: STMicroelectronics, Inc.
- Current Assignee Address: US TX Carrollton
- Agent David V. Carlson; Lisa K. Jorgenson
- Main IPC: H01L29/732
- IPC: H01L29/732
Abstract:
A method for manufacturing an isolated vertical power device includes forming, in a back surface of a first conductivity type substrate, back isolation wall trenches that surround a conduction region of the device. In a front surface of the substrate, front isolation wall trenches are formed around the conduction region. Thereafter, a film containing a second type dopant is deposited in the front and back isolation wall trenches. In the conduction region on the back surface, conduction region trenches are formed inside the perimeter of the isolation wall trenches. A first type dopant is deposited in the conduction region trenches. The dopants are diffused from the conduction region trenches and isolation wall trenches to form a first conductivity type conduction region structure and a second conductivity type isolation wall.
Public/Granted literature
- US20090051001A1 ISOLATED VERTICAL POWER DEVICE STRUCTURE WITH BOTH N-DOPED AND P-DOPED TRENCHES Public/Granted day:2009-02-26
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