Invention Grant
- Patent Title: Semiconductor chip structure, method of manufacturing the semiconductor chip structure, semiconductor chip package, and method of manufacturing the semiconductor chip package
- Patent Title (中): 半导体芯片结构,半导体芯片结构的制造方法,半导体芯片封装以及半导体芯片封装的制造方法
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Application No.: US12007920Application Date: 2008-01-17
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Publication No.: US07825495B2Publication Date: 2010-11-02
- Inventor: Seung-Kwan Ryu , Hee-Kook Choi , Sung-Min Sim , Dong-Hyeon Jang
- Applicant: Seung-Kwan Ryu , Hee-Kook Choi , Sung-Min Sim , Dong-Hyeon Jang
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce P.LC.
- Priority: KR10-2007-0007376 20070124
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
A semiconductor chip structure may include a semiconductor chip, a first insulation layer and a redistribution layer. The first insulation layer may be formed on the semiconductor chip. The first insulation layer may have at least one first groove formed at an upper surface portion of the first insulation layer. Further, the at least one first groove may have an upper width and a lower width greater than the upper width. The redistribution layer may be partially formed on the first insulation layer. The redistribution layer may have at least one first protrusion formed on a lower surface portion of the redistribution layer. The first protrusion may have an upper width and a lower width less than the upper width. The first protrusion may be inserted into the at least one first groove.
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