Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11902304Application Date: 2007-09-20
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Publication No.: US07825498B2Publication Date: 2010-11-02
- Inventor: Motoharu Haga , Yasumasa Kasuya
- Applicant: Motoharu Haga , Yasumasa Kasuya
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, PC
- Priority: JP2006-272126 20061003
- Main IPC: H01L23/36
- IPC: H01L23/36

Abstract:
A semiconductor device according to the present invention includes an island provided on one surface of a resin substrate, an external terminal provided on the other surface of the substrate, a thermal pad provided on the other surface of the substrate in opposed relation to the island, a heat conduction portion extending through the substrate from the one surface to the other surface to connect the island to the thermal pad in a thermally conductive manner, and a solder resist portion provided on the other surface of the substrate and having a heat dissipation opening which defines a gap with respect to an outer periphery of the thermal pad and a terminal opening which exposes the external terminal.
Public/Granted literature
- US20080179737A1 Semiconductor device Public/Granted day:2008-07-31
Information query
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