Invention Grant
US07825499B2 Semiconductor package and trenched semiconductor power device using the same
有权
半导体封装和使用相同的沟槽半导体功率器件
- Patent Title: Semiconductor package and trenched semiconductor power device using the same
- Patent Title (中): 半导体封装和使用相同的沟槽半导体功率器件
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Application No.: US12146924Application Date: 2008-06-26
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Publication No.: US07825499B2Publication Date: 2010-11-02
- Inventor: Yuka Tamadate
- Applicant: Yuka Tamadate
- Applicant Address: JP Nagano-Shi
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano-Shi
- Agency: Rankin, Hill & Clark LLP
- Priority: JP2007-168495 20070627
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/02 ; H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A semiconductor package 60 in which a region where a land pad 18 is formed is provided on an outer side of a region in which a flip-chip connecting pad 16 is formed, wherein a protecting member 39 is formed to expose the land pad 18 in the region in which the land pad 18 is formed, and the protecting member 39 includes a frame-shaped structure portion 39A disposed to surround the flip-chip connecting pad 16 and a support film portion 39B disposed on an outer side of the frame-shaped structure portion 39A, and a semiconductor device 70 using the semiconductor package 60.
Public/Granted literature
- US20090001606A1 SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2009-01-01
Information query
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