Invention Grant
US07825501B2 High bond line thickness for semiconductor devices 有权
半导体器件的高键合线厚度

High bond line thickness for semiconductor devices
Abstract:
Die attach methods used in making semiconductor devices and the semiconductor devices resulting from those methods are described. The methods include providing a leadframe with a die attach pad, using boundary features to define a perimeter on the die pad, depositing a conductive material (such as solder) within the perimeter, and then bonding a die containing an integrated circuit to the die pad by using the conductive material. The boundary features allow an increased thickness of conductive material to be used, resulting in an increased bond line thickness and increasing the durability and performance of the resulting semiconductor device.
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