Invention Grant
US07825510B2 Method for filling a contact hole and integrated circuit arrangement with contact hole
有权
用于填充接触孔的方法和具有接触孔的集成电路装置
- Patent Title: Method for filling a contact hole and integrated circuit arrangement with contact hole
- Patent Title (中): 用于填充接触孔的方法和具有接触孔的集成电路装置
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Application No.: US12032267Application Date: 2008-02-15
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Publication No.: US07825510B2Publication Date: 2010-11-02
- Inventor: Jürgen Förster , Klemens Prügl , Berthold Schuderer
- Applicant: Jürgen Förster , Klemens Prügl , Berthold Schuderer
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Brinks Hofer Gilson & Lione
- Priority: DE10219115 20020429
- Main IPC: H01L23/34
- IPC: H01L23/34
Abstract:
A method in which a base layer is deposited in a contact hole region under a protective gas, where base layer contains a nitride as main constituent. After the deposition of the base layer, a covering layer is deposited under gaseous nitrogen. An adhesion promoting layer results which is simple to produce and has good electrical properties.
Public/Granted literature
- US20080136032A1 METHOD FOR FILLING A CONTACT HOLE AND INTEGRATED CIRCUIT ARRANGEMENT WITH CONTACT HOLE Public/Granted day:2008-06-12
Information query
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