Invention Grant
- Patent Title: Substrate for semiconductor device, resin-sealed semiconductor device, method for manufacturing said substrate for semiconductor device and method for manufacturing said resin-sealed semiconductor device
- Patent Title (中): 半导体装置用基板，树脂密封型半导体装置，半导体装置用基板的制造方法及树脂密封型半导体装置的制造方法
-
Application No.: US12314372Application Date: 2008-12-09
-
Publication No.: US07825514B2Publication Date: 2010-11-02
- Inventor: Chikao Ikenaga , Shozo Ishikawa
- Applicant: Chikao Ikenaga , Shozo Ishikawa
- Applicant Address: JP Tokyo
- Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2007-319685 20071211
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/44
Abstract:
A substrate for a semiconductor device includes: a base plate, a plurality of external terminal portions respectively arranged in a plane on the base plate and having external terminal faces respectively facing the base plate; a plurality of internal terminal portions, respectively arranged in the plane on the base plate and having internal terminal faces respectively facing an opposite side to the base plate. The internal terminal portions are connected with the external terminal portions, via wiring portions, respectively. A part of the external terminal portions are located on the base plate in a predetermined arrangement area in which a semiconductor element is arranged.
Public/Granted literature
Information query
IPC分类:
