Invention Grant
US07825515B2 Semiconductor device, display device, and method of manufacturing semiconductor device
有权
半导体装置，显示装置以及半导体装置的制造方法
- Patent Title: Semiconductor device, display device, and method of manufacturing semiconductor device
- Patent Title (中): 半导体装置，显示装置以及半导体装置的制造方法
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Application No.: US12206187Application Date: 2008-09-08
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Publication No.: US07825515B2Publication Date: 2010-11-02
- Inventor: Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Takumi Nakahata , Kazumasa Kawase
- Applicant: Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Takumi Nakahata , Kazumasa Kawase
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-236353 20070912
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal.
Public/Granted literature
- US20090065942A1 SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2009-03-12
Information query
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