Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US12685169Application Date: 2010-01-11
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Publication No.: US07825518B2Publication Date: 2010-11-02
- Inventor: Hideo Imai , Shuichi Tanaka
- Applicant: Hideo Imai , Shuichi Tanaka
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2005-190448 20050629
- Main IPC: H01L23/52
- IPC: H01L23/52
Abstract:
A semiconductor device including: a semiconductor substrate including an electrode; a resin protrusion formed on the semiconductor substrate; and an interconnect electrically connected to the electrode and formed to extend over the resin protrusion. The interconnect includes a first portion formed on a top surface of the resin protrusion and a second portion formed on a side of a lower portion of the resin protrusion. The second portion has a width smaller than a width of the first portion.
Public/Granted literature
- US20100109144A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-05-06
Information query
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