发明授权
- 专利标题： Layout and process to contact sub-lithographic structures
- 专利标题（中）： 接触亚光刻结构的布局和工艺
-
申请号： US12034901申请日： 2008-02-21
-
公开(公告)号： US07825525B2公开(公告)日： 2010-11-02
- 发明人: Toshiharu Furukawa , Mark Charles Hakey , Steven J. Holmes , David V. Horak , Charles William Koburger, III , Chung Hon Lam
- 申请人： Toshiharu Furukawa , Mark Charles Hakey , Steven J. Holmes , David V. Horak , Charles William Koburger, III , Chung Hon Lam
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, PC
- 代理商 Louis J. Percello, Esq.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
An integrated circuit and method for fabrication includes first and second structures, each including a set of sub-lithographic lines, and contact landing segments connected to at least one of the sub-lithographic lines at an end portion. The first and second structures are nested such that the sub-lithographic lines are disposed in a parallel manner within a width, and the contact landing segments of the first structure are disposed on an opposite side of a length of the sub-lithographic lines relative to the contact landing segments of the second structure. The contact landing segments for the first and second structures are included within the width dimension, wherein the width includes a dimension four times a minimum feature size achievable by lithography.
公开/授权文献
信息查询
IPC分类:
