Invention Grant
- Patent Title: Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element
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Application No.: US12385539Application Date: 2009-04-10
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Publication No.: US07825569B2Publication Date: 2010-11-02
- Inventor: Eiji Natori , Takeshi Kijima , Koichi Furuyama , Yuzo Tasaki
- Applicant: Eiji Natori , Takeshi Kijima , Koichi Furuyama , Yuzo Tasaki
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2001-178840 20010613; JP2001-193048 20010626; JP2002-086139 20020326
- Main IPC: H01L41/187
- IPC: H01L41/187

Abstract:
A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.
Public/Granted literature
- US20090230821A1 Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element Public/Granted day:2009-09-17
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